參數(shù)資料
型號: HY5DU561622DT-6
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 16M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝: 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
文件頁數(shù): 3/28頁
文件大?。?/td> 814K
代理商: HY5DU561622DT-6
Rev. 0.6 / Mar. 2005
11
HY5DU561622DT
OPERATION COMMAND TRUTH TABLE - III
Current
State
/CS
/RAS
/CAS
/WE
Address
Command
Action
ROW
ACTIVATING
H
X
DSEL
NOP - Enter ROW ACT after tRCD
L
H
X
NOP
NOP - Enter ROW ACT after tRCD
LH
H
L
X
BST
ILLEGAL4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL4,10
L
H
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL4,10
LL
H
BA, RA
ACT
ILLEGAL4,9,10
LL
H
L
BA, AP
PRE/PALL
ILLEGAL4,10
LL
L
H
X
AREF/SREF
ILLEGAL11
LL
L
OPCODE
MRS
ILLEGAL11
WRITE
RECOVERING
H
X
DSEL
NOP - Enter ROW ACT after tWR
L
H
X
NOP
NOP - Enter ROW ACT after tWR
LH
H
L
X
BST
ILLEGAL4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
L
H
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
LL
H
BA, RA
ACT
ILLEGAL4,10
LL
H
L
BA, AP
PRE/PALL
ILLEGAL4,11
LL
L
H
X
AREF/SREF
ILLEGAL11
LL
L
OPCODE
MRS
ILLEGAL11
WRITE
RECOVERING
WITH
AUTOPRE-
CHARGE
H
X
DSEL
NOP - Enter precharge after tDPL
L
H
X
NOP
NOP - Enter precharge after tDPL
LH
H
L
X
BST
ILLEGAL4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL4,8,10
L
H
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL4,10
LL
H
BA, RA
ACT
ILLEGAL4,10
LL
H
L
BA, AP
PRE/PALL
ILLEGAL4,11
LL
L
H
X
AREF/SREF
ILLEGAL11
LL
L
OPCODE
MRS
ILLEGAL11
REFRESHING
H
X
DSEL
NOP - Enter IDLE after tRC
L
H
X
NOP
NOP - Enter IDLE after tRC
LH
H
L
X
BST
ILLEGAL11
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL11
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HY5DU561622DTP-H 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
HY5DU561622DTP-J 制造商:SK Hynix Inc 功能描述:SDRAM, DDR, 16M x 16, 66 Pin, Plastic, TSSOP
HY5DU561622DTP-K 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
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