參數(shù)資料
型號: HY5DU561622DT-6
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 16M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝: 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
文件頁數(shù): 28/28頁
文件大?。?/td> 814K
代理商: HY5DU561622DT-6
Rev. 0.6 / Mar. 2005
9
HY5DU561622DT
OPERATION COMMAND TRUTH TABLE - I
Current
State
/CS
/RAS
/CAS
/WE
Address
Command
Action
IDLE
HXX
X
DSEL
NOP or power down3
LH
H
X
NOP
NOP or power down3
LH
H
L
X
BST
ILLEGAL4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL4
L
H
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL4
L
H
BA, RA
ACT
Row Activation
LL
H
L
BA, AP
PRE/PALL
NOP
LL
L
H
X
AREF/SREF
Auto Refresh or Self Refresh5
L
OPCODE
MRS
Mode Register Set
ROW
ACTIVE
HXX
X
DSEL
NOP
LH
H
X
NOP
LH
H
L
X
BST
ILLEGAL4
L
H
L
H
BA, CA, AP
READ/READAP
Begin read : optional AP6
L
H
L
BA, CA, AP
WRITE/WRITEAP
Begin write : optional AP6
LL
H
BA, RA
ACT
ILLEGAL4
LL
H
L
BA, AP
PRE/PALL
Precharge7
LL
L
H
X
AREF/SREF
ILLEGAL11
LL
L
OPCODE
MRS
ILLEGAL11
READ
H
X
DSEL
Continue burst to end
L
H
X
NOP
Continue burst to end
L
H
L
X
BST
Terminate burst
L
H
L
H
BA, CA, AP
READ/READAP
Term burst, new read:optional AP8
L
H
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
LL
H
BA, RA
ACT
ILLEGAL4
L
H
L
BA, AP
PRE/PALL
Term burst, precharge
LL
L
H
X
AREF/SREF
ILLEGAL11
LL
L
OPCODE
MRS
ILLEGAL11
WRITE
H
X
DSEL
Continue burst to end
L
H
X
NOP
Continue burst to end
LH
H
L
X
BST
ILLEGAL4
L
H
L
H
BA, CA, AP
READ/READAP
Term burst, new read:optional AP8
L
H
L
BA, CA, AP
WRITE/WRITEAP
Term burst, new write:optional AP
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HY5DU561622DTP-K 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
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