參數(shù)資料
型號: HUFA76413DK8T
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mз
中文描述: 5.1 A, 60 V, 0.049 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: SO-8
文件頁數(shù): 4/11頁
文件大?。?/td> 269K
代理商: HUFA76413DK8T
2003 Fairchild Semiconductor Corporation
Rev. B
H
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
A
= 25°C unless otherwise noted
1
10
100
1
10
100
0.2
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
A
= 25
C
SINGLE PULSE
LIMAREA MAY BE
DS(ON)
OPERATION IN THIS
100
μ
s
10ms
1ms
1
10
0.1
1
10
15
40
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
0
5
10
15
20
25
1.5
2.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.5
3.0
3.5
4.0
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
5
10
15
20
25
0
0.5
1.0
1.5
2.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3V
T
A
= 25
o
C
V
GS
= 5V
V
GS
= 10V
40
50
60
70
80
90
100
2
4
6
8
10
I
D
= 1A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 5.1A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
=5.1A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
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