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參數(shù)資料
| 型號： | HUFA76413DK8T |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mз |
| 中文描述： | 5.1 A, 60 V, 0.049 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 269K |
| 代理商： | HUFA76413DK8T |
2003 Fairchild Semiconductor Corporation
Rev. B
H
Package Marking and Ordering Information
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(5)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
J
= 25°C, L = 20mH, I
= 5.1A
2:
R
θ
JA
is 50
o
C/W when mounted on a 0.5 in
2
copper pad on FR-4 at 1 second.
3:
R
θ
JA
is 191
C/W when mounted on a 0.027 in
copper pad on FR-4 at 1000 seconds.
4:
R
θ
JA
is 228
o
C/W when mounted on a 0.006 in
2
copper pad on FR-4 at 1000 seconds.
Device Marking
76413DK8
Device
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
HUFA76413DK8T
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 50V
V
GS
= 0V
V
GS
=
±
16V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
A
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 5.1A, V
GS
= 10V
I
D
= 4.8A, V
GS
= 5V
I
D
= 4.8A, V
GS
= 5V
T
A
= 150
o
C
1
-
-
-
3
V
r
DS(ON)
Drain to Source On Resistance
0.041
0.048
0.049
0.056
-
0.091
0.106
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
620
180
30
18
10
0.6
1.8
5
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V
I
D
= 4.8A
I
g
= 1.0mA
23
13
0.8
-
-
-
-
-
-
V
DD
= 30V, I
D
= 1A
V
GS
= 5V, R
GS
= 16
-
-
-
-
-
-
-
44
-
-
-
-
108
ns
ns
ns
ns
ns
ns
10
19
45
27
-
V
SD
Source to Drain Diode Voltage
I
SD
= 4.8A
I
SD
= 2.4A
I
SD
= 4.8A, dI
SD
/dt = 100A/
μ
s
I
SD
= 4.8A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
43
55
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUFA76413DK8T | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| HUFA76413DK8T_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level UltraFET?? Power MOSFET 60V, 4.8A, 56m?? |
| HUFA76413DK8T_B76001A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HUFA76413DK8T_F085 | 功能描述:MOSFET 60V Dual N-Channel Logic Level UltraFER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUFA76413P3 | 功能描述:MOSFET 20a 60V 0.056 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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