參數(shù)資料
型號(hào)： HUFA76413DK8T
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 功率晶體管
英文描述： N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mз
中文描述： 5.1 A, 60 V, 0.049 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 269K
代理商： HUFA76413DK8T
2003 Fairchild Semiconductor Corporation
January 2003
Rev. B
H
HUFA76413DK8T
N-Channel Logic Level UltraFET
Power MOSFET
60V, 4.8A, 56m
General Description
These N-Channel power MOSFETs are manufactured us-
ing the innovative UltraFET
process. This advanced pro-
cess technology achieves the lowest possible on-
resistance per silicon area, resulting in outstanding perfor-
mance. This device is capable of withstanding high energy
in the avalanche mode and the diode exhibits very low re-
verse recovery time and stored charge. It was designed for
use in applications where power efficiency is important,
such as switching regulators, switching convertors, motor
drivers, relay drivers, low-voltage bus switches, and power
management in portable and battery-operated products.
Applications
Motor and Load Control
Powertrain Management
Features
150°C Maximum Junction Temperature
UIS Capability (Single Pulse and Repetitive Pulse)
Ultra-Low On-Resistance r
DS(ON)
= 0.049
,
V
GS
=
10V
Ultra-Low On-Resistance r
DS(ON)
= 0.056
,
V
GS
=
5V
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
60
±
16
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25
o
C, V
GS
= 5V)
Continuous (T
C
= 125
o
C, V
GS
= 5V, R
θ
JA
= 228
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
5.1
4.8
1
A
A
A
A
Figure 4
260
2.5
0.02
-55 to 150
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JA
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Ambient SO-8 (Note 2)
Thermal Resistance Junction to Ambient SO-8 (Note 3)
Thermal Resistance Junction to Ambient SO-8 (Note 4)
50
191
228
o
C/W
o
C/W
o
C/W
G1 (2)
D1 (8)
S1 (1)
D1 (7)
D2 (6)
D2 (5)
S2 (3)
G2 (4)
SO-8
1
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HUFA76413P3 功能描述:MOSFET 20a 60V 0.056 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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