參數(shù)資料
型號(hào)： HUF76105DK8
廠商： INTERSIL CORP
元件分類(lèi)： 功率晶體管
英文描述： 5A, 30V, 0.050 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(5A, 30V, 0.050 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管)
中文描述： 5 A, 30 V, 0.072 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 176K
代理商： HUF76105DK8
5
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. SATURATION CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0
5
10
15
20
25
0
1
V
GS
, GATE TO SOURCE VOLTAGE (V)
2
3
4
5
I
D
150
o
C
-55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
25
o
C
5
10
15
20
25
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
0
V
GS
= 4V
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
A
= 25
C
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 5V
V
GS
= 10V
I
D
= 1.4A
30
50
70
90
110
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 5A
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
r
D
,
O
)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 5A
0.7
0.8
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.9
0.95
1.0
1.05
1.1
1.15
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
HUF76105DK8
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HUF76105DK8T 功能描述:MOSFET USE 512-FDS6930A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76105SK8 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76105SK8T 功能描述:MOSFET 5a 30V 0.050 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76107D3 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76107D3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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