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參數(shù)資料
| 型號(hào)： | HUF76105DK8 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5A, 30V, 0.050 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(5A, 30V, 0.050 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 5 A, 30 V, 0.072 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁(yè)數(shù)： | 11/12頁(yè) |
| 文件大小： | 176K |
| 代理商： | HUF76105DK8 |
11
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
SABER Electrical Model
REV June
1998
template huf76105 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
d..model dbodymod = (is = 3.01e-13, cjo = 5.74e-10, tt = 2.88e-8, xti = 4.5, m = 0.43)
d..model dbreakmod = ()
d..model dplcapmod = (cjo = 2.55e-10, is = 1e-30, n = 10, m = 0.6)
m..model mmedmod = (type=_n, vto = 1.92, kp = 2.1, is = 1e-30, tox = 1)
m..model mstrongmod = (type=_n, vto = 2.26, kp = 19, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 1.7, kp = 0.1, is = 1e-30, tox = 1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.2, voff = -2)
sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -2, voff = -6.2)
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.5, voff = 0.5)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -0.5)
c.ca n12 n8 = 4.95e-10
c.cb n15 n14 = 5.15e-10
c.cin n6 n8 = 2.9e-10
d.dbody n7 n71 = model=dbodymod
d.dbreak n72 n11 = model=dbreakmod
d.dplcap n10 n5 = model=dplcapmod
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 9.2e-10
l.lsource n3 n7 = 3.2e-10
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 9.94e-4, tc2 = 9.84e-8
res.rdbody n71 n5 = 1.47e-2, tc1 = -1.7e-3, tc2 = 4e-5
res.rdbreak n72 n5 = 3.94e-1, tc1 = 9.94e-4, tc2 = 9.12e-7
res.rdrain n50 n16 = 9e-3, tc1 = 8e-3, tc2 = 5.3e-5
res.rgate n9 n20 = 3.39
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 9.2
res.rlsource n3 n7 = 3.2
res.rslc1 n5 n51 = 1e-6, tc1 = 1e-3, tc2 = 1e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 22e-3, tc1 = 1e-3, tc2 = 0
res.rvtemp n18 n19 = 1, tc1 = -1.5e-3, tc2 = 1.7e-6
res.rvthres n22 n8 = 1, tc1 = -1.87e-3, tc2 = -1.2e-6
spe.ebreak n11 n7 n17 n18 = 33.87
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/42))** 6))
}
}
HUF76105DK8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HUF76112SK8 | 7.5A, 30V, 0.006 Ohm, N-Channel Power MOSFET(7.5A, 30V, 0.006 Ω,N溝道功率MOS場(chǎng)效應(yīng)管) |
| HUF76113DK8 | 6A, 30V, 0.032 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(6A, 30V, 0.032 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管) |
| HUF76113T3ST | 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET(4.7A, 30V, 0.031 Ω,N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管) |
| HUF76132P3 | 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管) |
| HUF76132S3S | 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N溝道,邏輯電平,UltraFET功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76105DK8T | 功能描述:MOSFET USE 512-FDS6930A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76105SK8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76105SK8T | 功能描述:MOSFET 5a 30V 0.050 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76107D3 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76107D3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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