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參數(shù)資料
| 型號： | HUF76105DK8 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5A, 30V, 0.050 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(5A, 30V, 0.050 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管) |
| 中文描述： | 5 A, 30 V, 0.072 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 176K |
| 代理商： | HUF76105DK8 |
10
PSPICE Electrical Model
.SUBCKT HUF76105 2 1 3 ;
REV June 1998
CA 12 8 4.95e-10
CB 15 14 5.15e-10
CIN 6 8 2.9e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 33.87
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 9.2e-10
LSOURCE 3 7 3.2e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 9e-3
RGATE 9 20 3.39
RLDRAIN 2 5 10
RLGATE 1 9 9.2
RLSOURCE 3 7 3.2
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 22e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*42),6))}
.MODEL DBODYMOD D (IS = 3.01e-13 IKF = 20 RS = 1.47e-2 TRS1 = -1.7e-3 TRS2 = 4e-5 CJO = 5.74e-10 TT = 2.88e-8 M = 0.43)
.MODEL DBREAKMOD D (RS = 3.94e-1 TRS1 = 9.94e-4 TRS2 = 9.12e-7)
.MODEL DPLCAPMOD D (CJO = 2.55e-10 IS = 1e-30 N = 10 M = 0.6)
.MODEL MMEDMOD NMOS (VTO = 1.92 KP = 2.1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.39)
.MODEL MSTROMOD NMOS (VTO = 2.26 KP = 19 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.7 KP = 0.1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 33.9 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 9.94e-4 TC2 = 9.84e-8)
.MODEL RDRAINMOD RES (TC1 = 8e-3 TC2 = 5.3e-5)
.MODEL RSLCMOD RES (TC1 = 1.e-3 TC2 = -1e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -1.87e-3 TC2 = -1.2e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.5e-3 TC2 = 1.7e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.2 VOFF= -2)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2 VOFF= -6.2)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -0.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
HUF76105DK8
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| HUF76112SK8 | 7.5A, 30V, 0.006 Ohm, N-Channel Power MOSFET(7.5A, 30V, 0.006 Ω,N溝道功率MOS場效應(yīng)管) |
| HUF76113DK8 | 6A, 30V, 0.032 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(6A, 30V, 0.032 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管) |
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| HUF76132P3 | 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管) |
| HUF76132S3S | 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs(75A, 30V, 0.011 Ω,N溝道,邏輯電平,UltraFET功率MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HUF76105DK8T | 功能描述:MOSFET USE 512-FDS6930A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76105SK8 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
| HUF76105SK8T | 功能描述:MOSFET 5a 30V 0.050 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76107D3 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| HUF76107D3S | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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