參數(shù)資料
型號： HUF76105DK8
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 5A, 30V, 0.050 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(5A, 30V, 0.050 Ω,雙N溝道,邏輯電平,UltraFET功率MOS場效應管)
中文描述： 5 A, 30 V, 0.072 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝： PLASTIC, SO-8
文件頁數(shù)： 3/12頁
文件大?。?/td> 176K
代理商： HUF76105DK8
3
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
DD
= 15V, I
D
5A,
R
L
= 3
, V
GS
=
10V,
R
GS
= 27
(Figure 16)
-
-
60
ns
Turn-On Delay Time
t
d(ON)
-
17
-
ns
Rise Time
t
r
-
21
-
ns
Turn-Off Delay Time
t
d(OFF)
-
60
-
ns
Fall Time
t
f
-
20
-
ns
Turn-Off Time
t
OFF
-
-
120
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 15V, I
D
1.4A,
R
L
= 10.7
I
g(REF)
= 1.0mA
(Figure 14)
-
9
11
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
5.3
6.4
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
0.35
0.45
nC
Gate to Source Gate Charge
Q
gs
-
1.00
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
2.40
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 13)
-
325
-
pF
Output Capacitance
C
OSS
-
180
-
pF
Reverse Transfer Capacitance
C
RSS
-
35
-
pF
Electrical Specifications
T
A
= 25
o
C
,
Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 5A
-
-
1.25
V
I
SD
= 1.4A
1.00
V
Reverse Recovery Time
t
rr
I
SD
= 1.4A, dI
SD
/dt = 100A/
μ
s
-
-
39
ns
Reverse Recovered Charge
Q
RR
I
SD
= 1.4A, dI
SD
/dt = 100A/
μ
s
-
-
42
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
1
2
3
4
5
6
25
50
75
100
125
150
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
V
GS
= 4.5V, R
θ
JA
= 228
o
C/W
V
GS
= 10V, R
θ
JA
= 50
o
C/W
HUF76105DK8
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相關代理商/技術參數(shù)
參數(shù)描述
HUF76105DK8T 功能描述:MOSFET USE 512-FDS6930A Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76105SK8 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76105SK8T 功能描述:MOSFET 5a 30V 0.050 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76107D3 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
HUF76107D3S 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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