- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381913 > HSK1118 (HSMC CORP.) Silicon N Channel MOS Type PDF資料下載
參數(shù)資料
| 型號： | HSK1118 |
| 廠商： | HSMC CORP. |
| 英文描述： | Silicon N Channel MOS Type |
| 中文描述： | 硅?頻道馬鞍山類型 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 61K |
| 代理商： | HSK1118 |
HI-SINCERITY
MICROELECTRONICS CORP.
HSK1118
Spec. No. : Preliminary Data
Issued Date : 1998.02.01
Revised Date : 1999.08.01
Page No. : 1/5
HSMC Product Specification
Description
Field Effect Transistor.
Silicon N Channel MOS Type.
High Speed, High Current DC-DC Converter, Relay Drive and
Motor Drive Applications
Features
4-Volt Gate Drive
Low Drain-Source On Resistanc - R
DS(on)
=0.95
(Typ.)
High Forward Transfer Admittance - | Yfs |=4.0S (Typ.)
Low Leakage Current - I
DSS
= 300uA (Max.) @V
DS
= 600V
Enhancement-Mode - V
th
= 1.5~3.5V @V
DS
= 10V, I
D
= 1mA
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature...................................................................................................... 150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 45 W
Maximum Voltages and Currents (Tc=25
°
C)
DRAIN to SOURCE Breakdown Voltage .......................................................................... 600 V
DRAIN to GATE Breakdown Voltage ................................................................................ 600 V
GATE to SOURCE Voltage...............................................................................................
±
30 V
DRAIN Current (Cont.).......................................................................................................... 6 A
DRAIN Current (Pluse)....................................................................................................... 24 A
Thermal Characteristics
Characteristic
Symbol
Max.
Units
Junction to Case
R
θ
JC
R
θ
JA
2.77
°
C/W
°
C/W
Junction to Ambient
62.5
Note : This transistor is an electrostatic sensitive device. Please handle with care.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HSK2474I | N-Channel MOSFETs |
| HSK2474J | N-Channel MOSFETs |
| HSMD-A100-J7PJ2 | Surface Mount LED Indicator |
| HSMD-A100-K4PJ2 | Surface Mount LED Indicator |
| HSME-A100-M3PJ1 | Surface Mount LED Indicator |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HSK120 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Diode for High Speed Switching |
| HSK120(TR-S-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| HSK120-E | 制造商:Renesas Electronics Corporation 功能描述:HSK120-E |
| HSK122 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Diode for High Voltage Switching |
| HSK-125 | 制造商:Cooper Bussmann 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。