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參數(shù)資料
| 型號： | HSD468 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 39K |
| 代理商： | HSD468 |
HI-SINCERITY
MICROELECTRONICS CORP.
HSD468
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6535
Issued Date : 1992.11.25
Revised Date : 2002.02.08
Page No. : 1/4
HSD468
HSMC Product Specification
Description
The HSD468 is designed for general purpose low frequency power
amplifier applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature...................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 900 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 25 V
VCEO Collector to Emitter Voltage...................................................................................... 20 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current .............................................................................................................. 1 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE
fT
Cob
Min.
25
20
5
-
-
-
85
-
-
Typ.
-
-
-
-
-
-
-
190
22
Max.
-
-
-
1
500
1
240
-
-
Unit
V
V
V
uA
mV
V
Test Conditions
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=20V, IE=0
IC=0.8A, IB=80mA
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification of hFE
Rank
Range
B
C
85-170
120-240
TO-92
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