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參數(shù)資料
| 型號： | HSD1159 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 34K |
| 代理商： | HSD1159 |
HI-SINCERITY
MICROELECTRONICS CORP.
HSD1159
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6706-B
Issued Date : 1993.01.13
Revised Date : 1999.08.01
Page No. : 1/3
HSMC Product Specification
Description
Capable of efficient drive with small internal loss due to excellent tf.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) .................................................................................... 40 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... 200 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage........................................................................................... 6 V
IC Collector Current........................................................................................................... 4.5 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
ft
Min.
200
60
6
-
-
-
-
30
25
-
Typ.
-
-
-
-
-
0.5
-
-
-
10
Max.
-
-
-
0.1
0.1
1
1.5
160
-
-
Unit
V
V
V
mA
mA
V
V
Test Conditions
IC=5mA, IE=0
IC=5mA, IB=0
IE=5mA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
IC=4A, IB=0.4A
IC=4A, IB=0.4A
IC=1A, VCE=5V
IC=4A, VCE=5V
VCE=5V, IC=1A
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
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