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參數(shù)資料
| 型號(hào)： | HSD1609 |
| 廠商： | HSMC CORP. |
| 英文描述： | RES THICK FILM 200K OHM 2W 5% |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 37K |
| 代理商： | HSD1609 |
HI-SINCERITY
MICROELECTRONICS CORP.
HSD1609
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6606
Issued Date : 1993.03.15
Revised Date : 2002.01.15
Page No. : 1/4
HSD1609
HSMC Product Specification
Features
Low frequency high voltage amplifier
Complementary pair with HSB1109
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C).................................................................................. 1.25 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 160 V
BVCEO Collector to Emitter Voltage.................................................................................. 160 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current........................................................................................................ 100 mA
Electrical Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
160
160
5
-
-
-
60
30
145
-
Typ.
-
-
-
-
-
-
-
-
-
3.8
Max.
-
-
-
10
2
1.5
320
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=10uA
IC=1mA
IE=10uA
VCB=140V
IC=30mA, IB=3mA
IC=10mA, VCE=5V
IC=10mA, VCE=5V
IC=1mA, VCE=5V
IC=10mA , VCE=5V
VCB=10V, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE1
Rank
Range
B
C
D
60-120
100-200
160-320
TO-126ML
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