參數(shù)資料
型號(hào)： HSD1609S
廠商： HSMC CORP.
英文描述： NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 瑞展晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 39K
代理商： HSD1609S
HI-SINCERITY
MICROELECTRONICS CORP.
HSD1609S
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6515
Issued Date : 1993.03.15
Revised Date : 2002.01.15
Page No. : 1/4
HSD1609S
HSMC Product Specification
Description
The HSD1609S is designed for low frequency high voltage amplifier
applications, complementary pair with HSB1109S.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150
°
C
Junction Temperature...................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 900 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage....................................................................................... 160 V
VCEO Collector to Emitter Voltage.................................................................................... 160 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
160
160
5
-
-
-
60
30
-
-
Typ.
-
-
-
Max.
-
-
-
10
2
1.5
320
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=140V, IE=0
IC=30mA, IB=3mA
VCE=5V, IC=10mA
VCE=5V, IC=10mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
IE=0, VCB=10V, f=1MHZ
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
-
-
-
-
140
3.8
MHz
pF
Classification of hFE1
Rank
Range
B
C
D
60-120
100-200
160-320
TO-92
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