參數(shù)資料
型號(hào)： HSD1616A
廠商： HSMC CORP.
英文描述： NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 瑞展晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 39K
代理商： HSD1616A
HI-SINCERITY
MICROELECTRONICS CORP.
HSD1616A
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6534
Issued Date : 1998.06.01
Revised Date : 2002.02.18
Page No. : 1/4
HSD1616A
HSMC Product Specification
Description
The HSD1616A is designed for audio frequency power amplifier and
medium speed switching applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature...................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 750 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage....................................................................................... 120 V
VCEO Collector to Emitter Voltage...................................................................................... 60 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current (DC)...................................................................................................... 1 A
IC Collector Current *(Pulse)................................................................................................. 2 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
ton
ts
tf
Min.
120
60
6
-
-
-
-
600
135
81
100
-
-
-
-
Typ.
-
-
-
-
-
150
0.9
-
-
-
160
-
0.07
0.95
0.07
Max.
-
-
-
100
100
300
1.2
700
600
-
-
19
-
-
-
Unit
V
V
V
nA
nA
mV
V
mV
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=6V
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=50mA
VCE=2V, IC=100mA
VCE=2V, IC=1A
VCE=2V, IC=100mA
IE=0, VCB=10V, f=1MHz
VCE=10V, IC=100mA
IB1=-IB2=10mA
VBE(off)=-2~-3V
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
uS
uS
uS
Classification of hFE1
Rank
Range
Y
G
L
135-270
200-400
300-600
TO-92
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