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參數(shù)資料
| 型號(hào)： | HSC3953S |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | HSC3953S |
HI-SINCERITY
MICROELECTRONICS CORP.
HSC3953S
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6502
Issued Date : 1992.08.25
Revised Date : 2001.01.01
Page No. : 1/3
HSMC Product Specification
Description
High-definition CRT display video output, wide-band amplifier
applications.
Features
High fT: fT=500MHz
High breakdown voltage: VCEO=120V min
Small reverse transfer capacitance
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature..................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 900 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ...................................................................................... 120 V
VCEO Collector to Emitter Voltage................................................................................... 120 V
VEBO Emitter to Base Voltage ............................................................................................. 3 V
IC Collector Current ...................................................................................................... 200 mA
Icp Peak Collector Current ............................................................................................ 400 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
120
120
3
-
-
-
-
60
40
-
-
Typ.
-
-
-
-
-
-
-
160
-
400
2.1
Max.
-
-
-
0.1
0.1
1
1
320
-
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=10uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=80V, IE=0
VEB=2V, IC=0
IC=30mA, IB=3mA
IC=30mA, IB=3mA
VCE=10V, IC=10mA
VCE=10V, IC=100mA
VCE=10V, IC=50mA,
IE=0, VCB=30V, f=1MHZ
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification of hFE1
Rank
Range
D
E
F
60-120
100-200
160-320
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