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參數(shù)資料
| 型號： | HSC3953 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 33K |
| 代理商： | HSC3953 |
HI-SINCERITY
MICROELECTRONICS CORP.
HSC3953
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2001.01.01
Page No. : 1/3
HSMC Product Specification
Description
High–definition CRT display video output, wide-band amplifier.
Features
High fT: 500MHz
High Breakdown Voltage: BVCEO=120Vmin
Small Reverse Transfer Capacitance & Excellent HF Response: Cre=1.7pF
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................... 1.3 W
Total Power Dissipation (Tc=25
°
C) ...................................................................................... 8 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... 120 V
BVCEO Collector to Emitter Voltage................................................................................. 120 V
BVEBO Emitter to Base Voltage........................................................................................... 3 V
IC Collector Current....................................................................................................... 200 mA
Icp Peak Collector Current............................................................................................. 400 mA
Electrical Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Min.
120
120
3
-
-
-
-
60
40
-
Typ.
-
-
-
-
-
-
-
-
-
400
Max.
-
-
-
0.1
0.1
1
1
320
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=120V, IE=0
VEB=2V
IC=30mA, IB=3mA
IC=30mA, IB=3mA
IC=10mA, VCE=10V
IC=100mA, VCE=10V
IC=50mA , VCE=10V
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
Classification Of hFE1
Rank
Range
D
E
F
60-120
100-200
160-320
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