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參數(shù)資料
| 型號： | HSB562 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 40K |
| 代理商： | HSB562 |
HI-SINCERITY
MICROELECTRONICS CORP.
HSB562
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6513-B
Issued Date : 1993.01.15
Revised Date : 2000.10.01
Page No. : 1/4
HSMC Product Specification
Description
The HSB562 is designed for general purpose low frequency power
amplifier applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 900 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ....................................................................................... -25 V
VCEO Collector to Emitter Voltage.................................................................................... -20 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ............................................................................................................ -1 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE
fT
Cob
Min.
-25
-20
-5
-
-
-
85
-
-
Typ.
-
-
-
-
-
-
-
350
38
Max.
-
-
-
-1
-500
-1
240
-
-
Unit
V
V
V
uA
mV
V
Test Conditions
IC=-10uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-20V, IE=0
IC=-800mA, IB=-80mA
IC=-500mA, VCE=-2V
VCE=-2V, IC=-500mA
VCE=-2V, IC=-500mA
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE
Rank
Range
B
C
85-170
120-240
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