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參數(shù)資料
| 型號： | HSB647A |
| 廠商： | HSMC CORP. |
| 英文描述： | SILICON PNP EPITAXIAL |
| 中文描述： | 硅外延進(jìn)步黨 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | HSB647A |
HI-SINCERITY
MICROELECTRONICS CORP.
HSB647A
SILICON PNP EPITAXIAL
Spec. No. : HA200201
Issued Date : 2002.01.01
Revised Date : 2005.02.14
Page No. : 1/4
HSB647A
HSMC Product Specification
Description
Low Frequency Power Amplifier Complementary Pair With HSD667A.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature..................................................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25
°
C)............................................................................................................... 900 mW
Maximum Voltages and Currents (T
=25
°
C)
V
CBO
Collector to Base Voltage ........................................................................................................................ -120 V
V
CEO
Collector to Emitter Voltage..................................................................................................................... -100 V
V
EBO
Emitter to Base Voltage............................................................................................................................... -5 V
I
C
Collector Current (DC) ..................................................................................................................................... -1 A
I
CP
Collector Current (Peak)................................................................................................................................. -2 A
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)
V
BE(on)
*h
FE1
*h
FE2
f
T
Cob
Parameter
Min.
-120
Typ. Max. Unit
-
-
Test Conditions
I
C
=-100uA, I
E
=0
I
C
=-1mA, R
BE
=
∞
I
E
=-10uA, I
C
=0
V
CB
=-100V, I
E
=0
I
C
=-500mA, I
B
=-50mA
V
CE
=-5V, I
C
=-150mA
V
CE
=-5V, I
C
=-150mA
V
CE
=-5V, I
C
=-500mA
MHz V
CE
=-5V, I
C
=-150mA
pF
V
CB
=-10V, f=1MHz, I
E
=0
Collector to Base Breakdown Voltage
V
Collector to Emitter Breakdown Voltage
-100
-
-
V
Emitter to Base Breakdown Voltage
Collector Cutoff Current
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
DC Current Transfer Ratio 1
DC Current Transfer Ratio 2
Gain Bandwidth Product
Collector Output Capacitance
-5
-
-
-
60
30
-
-
-
-
-
-
-
-
-
V
uA
V
V
-10
-1
-1.5
200
-
-
-
140
20
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
Classification of hFE1
Rank
Range
B
C
60-120
100-200
TO-92
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