參數(shù)資料
型號(hào)： HSB649A
廠商： HSMC CORP.
英文描述： SILICON PNP EPITAXIAL PLANAR TRANSISTOR
中文描述： 進(jìn)步黨外延硅平面晶體管
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 32K
代理商： HSB649A
HI-SINCERITY
MICROELECTRONICS CORP.
HSB649A
SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6629
Issued Date : 1995.12.18
Revised Date : 2002.04.03
Page No. : 1/3
HSB649A
HSMC Product Specification
Description
Low frequency power amplifier complementary pair with HSD669A.
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation ........................................................................................................ 1 W
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -180 V
BVCEO Collector to Emitter Voltage................................................................................. -160 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current (DC).................................................................................................. -1.5 A
IC Collector Current (Pulse) ................................................................................................ -3 A
Electrical Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
-180
-160
-5
-
-
-
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
140
27
Max.
-
-
-
-10
-1
-1.5
200
-
-
-
Unit
V
V
V
uA
V
V
Test Conditions
IC=-1mA, IE=0
IC=-10mA, IB=0
IE=-1mA, IC=0
VCB=-160V, IE=0
IC=-500mA, IB=-50mA
IC=-150mA, VCE=-5V
IC=-150mA, VCE=-5V
IC=-500mA, VCE=-5V
IC=-150mA ,VCE=-5V
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE1
Rank
Range
B
C
60-120
100-200
TO-126ML
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