
HI-SINCERITY
MICROELECTRONICS CORP.
HSB564A
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6519
Issued Date : 1993.01.15
Revised Date : 2001.10.15
Page No. : 1/3
HSB564A
HSMC Product Specification
Description
The HSB564A is designed for general purpose low frequency power
amplifier applications.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 800 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage........................................................................................ -30 V
VCEO Collector to Emitter Voltage..................................................................................... -25 V
VEBO Emitter to Base Voltage............................................................................................ -5 V
IC Collector Current ............................................................................................................. -1 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
*VBE(sat)
*hFE
fT
Cob
Min.
-30
-25
-5
-
-
-
70
-
-
Typ.
-
-
-
-
-
-
-
110
18
Max.
-
-
-
-100
-0.5
-1.2
400
-
-
Unit
V
V
V
nA
V
V
Test Conditions
IC=-100uA, IE=0
IC=-10mA. IB=0
IE=-100uA, IC=0
VCB=-30V, IE=0
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
VCE=-1V, IC=-100mA
VCE=-6V, IC=-10mA, f=100MHz
VCB=-6V, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE
Rank
Range
O
Y
GR
70-140
120-240
200-400