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參數(shù)資料
| 型號： | HSB764 |
| 廠商： | HSMC CORP. |
| 英文描述： | PNP EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 進(jìn)步黨外延平面晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 38K |
| 代理商： | HSB764 |
HI-SINCERITY
MICROELECTRONICS CORP.
HSB764
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6549-B
Issued Date : 1996.11.25
Revised Date : 2000.10.01
Page No. : 1/4
HSMC Product Specification
Description
Voltage regulator, Relay driver, electrical equipment application.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 900 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ....................................................................................... -60 V
VCEO Collector to Emitter Voltage.................................................................................... -50 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current............................................................................................................. -1 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-60
-50
-5
Typ.
Max.
Unit
V
V
V
uA
uA
mV
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-50V, IE=0
VEB=-4V, IC=0
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-2V, IC=-50mA
VCE=-2V, IC=-1A
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
-1
-1
-700
-1.2
320
60
30
150
20
MHz
pF
Classification of hFE1
Rank
Range
D
E
F
60-120
100-200
160-320
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