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參數(shù)資料
| 型號(hào)： | HSB1386J |
| 廠商： | HSMC CORP. |
| 英文描述： | LOW FREQUENCY TRANSISTOR (-20V, -4A) |
| 中文描述： | 低頻晶體管（- 20V的，- 4A條） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | HSB1386J |
HI-SINCERITY
MICROELECTRONICS CORP.
HSB1386J
LOW FREQUENCY TRANSISTOR (-20V, -4A)
Spec. No. : HJ200301
Issued Date : 2001.11.30
Revised Date : 2005.07.14
Page No. : 1/4
HSB1386J
HSMC Product Specification
Features
Low V
.
V
CE(sat)
=-0.55V(Typ.) (I
C
/I
B
=-4A/-0.1A)
Excellent DC current gain characteristics.
Structure
Epitaxial planar type PNP silicon transistor
Absolute Maximum Ratings
(T
A
=25
°
C)
Symbol
V
CBO
V
CEO
V
EBO
Parameter
Limits
-30
-20
-6
-4
-10
20
150
-55~+150
Unit
V
V
V
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
I
C
Collector Current
A(Pulse)*
W
P
D
T
j
T
stg
Collector Power Dissipation (T
C
=25
o
C)
Junction Temperature
Storage Temperature
o
C
o
C
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*hFE
fT
Cob
Parameter
Min.
-30
-20
-6
-
-
-
82
-
-
Typ.
-
-
Max.
-
-
Unit
V
V
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter B reakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
I
C
=-50uA
I
C
=-1mA
I
C
=-50uA
V
CB
=-20V
V
EB
=-5V
I
C
/I
B
=-4A/-0.1A
V
CE
=-2V, IC=-0.5A
MHz V
CE
=-6V, I
E
=50mA, f=30MHz
pF
V
CB
=-20V, I
E
=0A, f=1MHz
-
-
-
-
-0.5
-0.5
-1
580
-
-
uA
uA
V
110
30
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
Classification Of hFE
Rank
Range
P
Q
R
E
82-180
120-270
180-390
370-580
TO-252
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