
HI-SINCERITY
MICROELECTRONICS CORP.
HMBD4148
HIGH-SPEED SWITCHING DIODE
Spec. No. : HE6802
Issued Date : 1995.12.09
Revised Date : 2002.10.25
Page No. : 1/2
HMBD4148
HSMC Product Specification
Description
The HMBD4148 is designed for high-speed switching application in hybrid
thick-and thin-film circuits. The devices is manufactured by the silicon
epitaxial planar process and packed in plastic surface mount package.
Features
Small SMD Package (SOT-23)
Ultra-high Speed
Low Forward Voltage
Fast Reverse Recovery Time
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................ -65 ~ +150
°
C
Junction Temperature ................................................................................................................ +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................................. 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
Continuous Reverse Voltage .......................................................................................................... 70 V
Continuous Forward Current....................................................................................................... 200 mA
Peak Forward Surge Current...................................................................................................... 500 mA
Characteristics
(Ta=25
°
C)
Characteristic
Symbol
VF
VR
IR
CT
Condition
Min
-
100
-
-
Max
1
-
5
4
Unit
V
V
uA
pF
Forward Voltage
Reverse Breakdown
Reverse Current
Total Capacitance
IF=10mA
IR=100uA
VR=75V
VR=0, F=1MHz
IF=IR=10mA, RL=100
Measured at IR=1mA
Reverse Recovery Time
Trr
-
4
nS
SOT-23