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參數(shù)資料
| 型號： | HMBD914 |
| 廠商： | HSMC CORP. |
| 英文描述： | HIGH-SPEED SWITCHING DIODE |
| 中文描述： | 高速開關(guān)二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 23K |
| 代理商： | HMBD914 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBD914
HIGH-SPEED SWITCHING DIODE
Spec. No. : HE6538
Issued Date : 1997.01.18
Revised Date : 2002.10.25
Page No. : 1/3
HMBD914
HSMC Product Specification
Description
The HMBD914 is designed for high-speed switching application in hybrid
thick-and thin-film circuits. The device is manufactured by the silicon
epitaxial planar process and packed in plastic surface mount package.
Features
Small SMD Package (SOT-23)
Ultra-high Speed
Low Forward Voltage
Fast Reverse Recovery Time
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................ -65 ~ +150
°
C
Junction Temperature ................................................................................................................ +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................................. 250 mW
Maximum Voltages and Currents (Ta=25
°
C)
Repetitive Peak Reverse Voltage.................................................................................................... 85 V
VR Coinuous Reverse Voltage........................................................................................................ 70 V
IF Continuous Forward Current................................................................................................... 200 mA
IFSM Peak Forward Surge Current............................................................................................. 500 mA
IFSM Non-Repetitive Peak Forward Current t=1uS ........................................................................... 4 A
IFSM Non-Repetitive Peak Forward Current t=1mS .......................................................................... 1 A
IFSM Non-Repetitive Peak Forward Current t=1S .......................................................................... 0.5 A
Characteristics
(Ta=25
°
C)
Characteristic
Symbol
VF
VR
IR(1)
IR(2)
Cd
Condition
Min
-
100
-
-
-
Max
1
Unit
V
V
nA
uA
pF
Forward Voltage
Reverse Breakdown Voltage
IF=10mA
IR=100uA
VR=25V
VR=75V
VR=0, F=1MHz
IF=IR=10mA, RL=100
Measured at IR=1mA
25
5
1.5
Reverse Current
Diode Capacitance
Reverse Recovery Time
Trr
-
4
ns
SOT-23
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