
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT2222A
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6822
Issued Date : 1993.06.30
Revised Date : 2002.10.25
Page No. : 1/4
HMBT2222A
HSMC Product Specification
Description
The HMBT2222A is designed for general purpose amplifier and
high-speed switching, medium-power switching applications.
Features
High frequency current gain
High Speed Switching
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 75 V
VCEO Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current........................................................................................................ 600 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
300
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
500
1.0
1.2
2.0
-
-
-
300
-
-
Unit
V
V
V
nA
nA
nA
mV
V
V
V
Test Conditions
IC=10uA
IC=10mA
IC=10uA
VCB=60V
VCE=60V, VEB(OFF)=3V
VEB=3V
IC=380mA, IB=10mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCB=20V, IC=20mA, f=100MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
SOT-23