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參數(shù)資料
| 型號： | HMBT2369 |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 30K |
| 代理商： | HMBT2369 |
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT2369
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6834
Issued Date : 1998.02.01
Revised Date : 2001.10.25
Page No. : 1/3
HMBT2369
HSMC Product Specification
Description
The HMBT2369 is designed for general purpose switching and
amplifier applications.
Features
Low Collector Saturation Voltage
High speed switching Transistor
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)................................................................................ 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 40 V
VCEO Collector to Emitter Voltage...................................................................................... 15 V
VEBO Emitter to Base Voltage........................................................................................... 4.5 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
fT
Cob
Min.
40
15
4.5
-
-
-
-
-
700
-
40
20
500
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
900
-
Max.
-
-
-
400
100
250
300
600
850
1.5
120
-
-
4
Unit
V
V
V
nA
nA
mV
mV
mV
mV
V
Test Conditions
IC=100uA, IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=20V, IE=0
VEB=2V, IC=0
IC=10mA, IB=1mA
IC=10mA, IB=0.3mA
IC=100mA, IB=10mA
IC=10mA, IB=1mA
IC=100mA, IB=1mA
IC=10mA, VCE=1V
IC=100mA, VCE=2V
IC=10mA, VCE=10V, f=100MHZ
VCB=5V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
SOT-23
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HMBT2484 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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| HMBT2907A | 制造商:HSMC 制造商全稱:HSMC 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR |
| HMBT3904 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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