參數(shù)資料
型號(hào)： HMBT1815
廠商： HSMC CORP.
英文描述： NPN EPITAXIAL PLANAR TRANSISTOR
中文描述： 瑞展晶體管
文件頁數(shù)： 1/3頁
文件大?。?/td> 32K
代理商： HMBT1815
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT1815
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6805
Issued Date : 1992.08.25
Revised Date : 2002.10.25
Page No. : 1/3
HMBT1815
HSMC Product Specification
Description
The HMBT1815 is designed for use in driver stage of AF amplifier and
general purpose amplification.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°
C
Junction Temperature...................................................................................... 150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C)............................................................................... 225 mW
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 50 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 150 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
60
50
5
-
-
-
-
120
25
80
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
250
1
700
-
-
3.5
Unit
V
V
V
nA
nA
mV
V
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=60V
VEB=5V
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
MHz
pF
Classification Of hFE1
Rank
Range
C4Y
120-240
C4G
200-400
C4B
350-700
SOT-23
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