參數(shù)資料
型號： HLB122D
廠商： HSMC CORP.
英文描述： NPN Triple Diffused Planar Type High Voltage Transistor
中文描述： npn型三重擴散平面型高壓晶體管
文件頁數(shù)： 1/4頁
文件大?。?/td> 50K
代理商： HLB122D
HI-SINCERITY
MICROELECTRONICS CORP.
HLB122D
NPN Triple Diffused Planar Type High Voltage Transistor
Spec. No. : HD200206
Issued Date : 2002.05.01
Revised Date : 2005.08.16
Page No. : 1/4
HLB122D
HSMC Product Specification
Description
The HLB122D is a medium power transistor designed for use in switching
applications.
Features
High breakdown voltage
Low collector saturation voltage
Fast switching speed
Absolute Maximum Ratings
(T
A
=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°
C
Junction Temperature.................................................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (T
C
=25
°
C).................................................................................................................... 10 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage....................................................................................................................... 600 V
BV
CEO
Collector to Emitter Voltage.................................................................................................................... 400 V
BV
Emitter to Base Voltage.............................................................................................................................. 6 V
I
C
Collector Current (DC) ............................................................................................................................... 800 mA
I
C
Collector Current (Pulse).......................................................................................................................... 1600 mA
I
B
Base Current (DC)...................................................................................................................................... 100 mA
I
B
Base Current (Pulse).................................................................................................................................. 200 mA
Electrical Characteristics
(T
A
=25
°
C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)
*h
FE1
*h
FE2
tf
Min.
600
400
6
-
-
-
-
-
-
10
10
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
400
800
1
40
-
0.6
Unit
V
V
V
uA
uA
uA
mV
mV
V
Test Conditions
I
C
=100uA
I
C
=10mA
I
E
=10uA
V
CB
=600V
V
CE
=400V
V
EB
=6V
I
C
=100mA, I
B
=20mA
I
C
=300mA, I
B
=60mA
I
C
=100mA, I
B
=20mA
V
CE
=10V, I
C
=0.1A
V
CE
=10V, I
C
=0.5A
V
CC
=100V, I
C
=0.3A, I
B1
=-I
B2
=0.06A
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
uS
Classification of hFE1
Rank
Range
B1
B2
B3
B4
B5
B6
10-17
13-22
18-27
23-32
28-37
33-40
TO-126ML
相關(guān)PDF資料
PDF描述
HLB122I NPN Triple Diffused Planar Type High Voltage Transistors
HLB122J NPN Triple Diffused Planar Type High Voltage Transistor
HLB122T NPN Triple Diffused Planar Type High Voltage Transistor
HLB123I NPN EPITAXIAL PLANAR TRANSISTOR
HLB123T NPN EPITAXIAL PLANAR TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HLB122I 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistors
HLB122J 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor
HLB122T 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor
HLB123 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
HLB123D 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
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