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參數(shù)資料
| 型號： | HLB123T |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 37K |
| 代理商： | HLB123T |
HI-SINCERITY
MICROELECTRONICS CORP.
HLB123T
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : Preliminary Data
Issued Date : 1993.05.15
Revised Date : 2001.02.14
Page No. : 1/3
HLB123T
HSMC Product Specification
Description
The HLB123T is designed for high voltage. High speed switching inductive
circuits and amplifier applications.
Features
High Speed Switching
Low Saturation Voltage
High Reliability
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature ....................................................................................................... -50 ~ +150
°
C
Junction Temperature ............................................................................................... +150
°
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C) ............................................................................................... 3.5 W
Total Power Dissipation (Tc=25
°
C)................................................................................................. 30 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................ 600 V
BVCEO Collector to Emitter Voltage ............................................................................................. 400 V
BVEBO Emitter to Base Voltage ....................................................................................................... 8 V
IC Collector Current (DC).................................................................................................................. 1 A
IC Collector Current (Pulse).............................................................................................................. 2 A
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
Min.
600
400
8
-
-
-
-
-
-
10
10
6
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
0.8
0.9
1.2
1.8
50
-
-
Unit
V
V
V
uA
uA
V
V
V
V
Test Conditions
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=600V, IE=0
VBE=9V, IC=0
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
IC=0.3A, VCE=5V
IC=0.5A, VCE=5V
IC=1A, VCE=5V
*Pulse Test : Pulse Width
≤
380us, Duty Cycle
≤
2%
Classification Of hFE1
Rank
Range
B1
B2
B3
B4
B5
B6
B7
B8
10-17
13-22
18-27
23-32
28-37
33-42
38-47
43-50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HLB123 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HLB123D | NPN EPITAXIAL PLANAR TRANSISTOR |
| HLB124 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HLB124E | NPN EPITAXIAL PLANAR TRANSISTOR |
| HLB125E | NPN EPITAXIAL PLANAR TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HLB124 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HLB124E | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HLB124-TO-220 | 制造商:ANALOGICTECH 制造商全稱:Advanced Analogic Technologies 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
| HLB125E | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HLB125HE | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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