參數(shù)資料
型號(hào)： HLB122T
廠商： HSMC CORP.
英文描述： NPN Triple Diffused Planar Type High Voltage Transistor
中文描述： npn型三重?cái)U(kuò)散平面型高壓晶體管
文件頁數(shù)： 1/3頁
文件大?。?/td> 34K
代理商： HLB122T
HI-SINCERITY
MICROELECTRONICS CORP.
HLB122T
NPN Triple Diffused Planar Type High Voltage Transistor
Spec. No. : HT200208
Issued Date : 1998.07.01
Revised Date : 2002.05.08
Page No. : 1/3
HLB122T
HSMC Product Specification
Description
The HLB122T is a medium power transistor designed for use in switching
applications.
Features
High breakdown voltage
Low collector saturation voltage
Fast switching speed
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature ................................................................................................................ +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C)................................................................................................. 20 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................. 600 V
BVCEO Collector to Emitter Voltage.............................................................................................. 400 V
BVEBO Emitter to Base Voltage....................................................................................................... 6 V
IC Collector Current (DC)............................................................................................................ 800 mA
IC Collector Current (Pulse)...................................................................................................... 1600 mA
IB Base Current (DC).................................................................................................................. 100 mA
IB Base Current (Pulse).............................................................................................................. 200 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
tf
Min.
600
400
6
-
-
-
-
-
-
10
10
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
400
800
1
40
-
0.6
Unit
V
V
V
uA
uA
uA
mV
mV
V
Test Conditions
IC=100uA
IC=10mA
IE=10uA
VCB=600V
VCE=400V
VEB=6V
IC=100mA, IB=20mA
IC=300mA, IB=60mA
IC=100mA, IB=20mA
VCE=10V, IC=0.1A
VCE=10V, IC=0.5A
VCC=100V, IC=0.3A,IB1=-IB2=0.06A
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
uS
Classification of hFE1
Rank
Range
B1
B2
B3
B4
B5
B6
10-17
13-22
18-27
23-32
28-37
33-40
TO-126
相關(guān)PDF資料
PDF描述
HLB123I NPN EPITAXIAL PLANAR TRANSISTOR
HLB123T NPN EPITAXIAL PLANAR TRANSISTOR
HLB123 NPN EPITAXIAL PLANAR TRANSISTOR
HLB123D NPN EPITAXIAL PLANAR TRANSISTOR
HLB124 NPN EPITAXIAL PLANAR TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HLB123 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
HLB123D 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
HLB123I 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
HLB123SA 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
HLB123T 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*