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參數(shù)資料
| 型號： | HLB122I |
| 廠商： | HSMC CORP. |
| 英文描述： | NPN Triple Diffused Planar Type High Voltage Transistors |
| 中文描述： | npn型三重擴散平面型高壓晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 34K |
| 代理商： | HLB122I |
HI-SINCERITY
MICROELECTRONICS CORP.
HLB122I
NPN Triple Diffused Planar Type High Voltage Transistor
Spec. No. : HE9030
Issued Date : 1998.07.01
Revised Date : 2002.05.08
Page No. : 1/4
HLB122I
HSMC Product Specification
Description
The HLB122I is a medium power transistor designed for use in switching
applications.
Features
High breakdown voltage
Low collector saturation voltage
Fast switching speed
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature........................................................................................................ -55 ~ +150
°
C
Junction Temperature ................................................................................................................ +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C)................................................................................................. 30 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................. 600 V
BVCEO Collector to Emitter Voltage.............................................................................................. 400 V
BVEBO Emitter to Base Voltage....................................................................................................... 6 V
IC Collector Current (DC)............................................................................................................ 800 mA
IC Collector Current (Pulse)...................................................................................................... 1600 mA
IB Base Current (DC).................................................................................................................. 100 mA
IB Base Current (Pulse).............................................................................................................. 200 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
tf
Min.
600
400
6
-
-
-
-
-
-
10
10
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
400
800
1
40
-
0.6
Unit
V
V
V
uA
uA
uA
mV
mV
V
Test Conditions
IC=100uA
IC=10mA
IE=10uA
VCB=600V
VCE=400V
VEB=6V
IC=100mA, IB=20mA
IC=300mA, IB=60mA
IC=100mA, IB=20mA
VCE=10V, IC=0.1A
VCE=10V, IC=0.5A
VCC=100V, IC=0.3A, IB1=-IB2=0.06A
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
uS
Classification of hFE1
Rank
Range
B1
B2
B3
B4
B5
B6
10-17
13-22
18-27
23-32
28-37
33-40
TO-251
相關PDF資料 |
PDF描述 |
|---|---|
| HLB122J | NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB122T | NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB123I | NPN EPITAXIAL PLANAR TRANSISTOR |
| HLB123T | NPN EPITAXIAL PLANAR TRANSISTOR |
| HLB123 | NPN EPITAXIAL PLANAR TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HLB122J | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB122T | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor |
| HLB123 | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HLB123D | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| HLB123I | 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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