參數(shù)資料
型號(hào)： HLB122J
廠商： HSMC CORP.
英文描述： NPN Triple Diffused Planar Type High Voltage Transistor
中文描述： npn型三重?cái)U(kuò)散平面型高壓晶體管
文件頁數(shù)： 1/4頁
文件大小： 34K
代理商： HLB122J
HI-SINCERITY
MICROELECTRONICS CORP.
HLB122J
NPN Triple Diffused Planar Type High Voltage Transistor
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2002.05.08
Page No. : 1/4
HLB122J
HSMC Product Specification
Description
The HLB122J is a medium power transistor designed for use in
switching applications.
Features
High breakdown voltage
Low collector saturation voltage
Fast switching speed
Absolute Maximum Ratings
(Ta=25
°
C)
Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150
°
C
Junction Temperature.................................................................................................... +150
°
C
Maximum Power Dissipation
Total Power Dissipation (Tc=25
°
C) ..................................................................................... 30 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 600 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current (DC)............................................................................................... 800 mA
IC Collector Current (Pulse) ......................................................................................... 1600 mA
IB Base Current (DC) ..................................................................................................... 100 mA
IB Base Current (Pulse).................................................................................................. 200 mA
Characteristics
(Ta=25
°
C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
fT
Min.
600
400
6
-
-
-
-
-
-
10
5
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
400
800
1
40
-
0.6
Unit
V
V
V
uA
uA
uA
mV
mV
V
Test Conditions
IC=100uA
IC=10mA
IE=10uA
VCB=600V
VCE=400V
VEB=6V
IC=100mA, IB=20mA
IC=300mA, IB=60mA
IC=100mA, IB=20mA
VCE=10V, IC=0.1A
VCE=10V, IC=0.5A
VCC=100V, IC=0.3A, IB1=-IB2=0.06A
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
uS
TO-252
相關(guān)PDF資料
PDF描述
HLB122T NPN Triple Diffused Planar Type High Voltage Transistor
HLB123I NPN EPITAXIAL PLANAR TRANSISTOR
HLB123T NPN EPITAXIAL PLANAR TRANSISTOR
HLB123 NPN EPITAXIAL PLANAR TRANSISTOR
HLB123D NPN EPITAXIAL PLANAR TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HLB122T 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN Triple Diffused Planar Type High Voltage Transistor
HLB123 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
HLB123D 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
HLB123I 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
HLB123SA 制造商:HSMC 制造商全稱:HSMC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*