- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384406 > HGTP10N50E1D (HARRIS SEMICONDUCTOR) Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 330uF; Voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk PDF資料下載
參數(shù)資料
| 型號： | HGTP10N50E1D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 330uF; Voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk |
| 中文描述： | 17.5 A, 500 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 37K |
| 代理商： | HGTP10N50E1D |
3-24
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT. (REFER TO APPLICA-
TION NOTES AN7254 AND AN7260)
FIGURE 15. TYPICAL DIODE EMITTER-TO-COLLECTOR
VOLTAGE vs CURRENT FOR ALL TYPES
Test Circuit
FIGURE 16. TYPICAL DIODE REVERSE-RECOVERY TIME FOR
ALL TYPES
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
1000
900
800
700
600
500
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
W
O
,
μ
J
10A, 40C1/50C1
10A, 40E1/50E1
20A, 40C1/50C1
20A, 40E1/50E1
V
GE
= 10V, V
CE(CLP)
= 300V
L = 25
μ
H, R
G
= 25
500
375
250
125
0
V
C
,
V
G
,
10
4
0
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
TIME (
μ
s)
GATE-
EMITTER
VOLTAGE
R
L
= 25
I
G(REF)
= 0.76mA
V
GE
= 10V
COLLECTOR-EMITTER VOLTAGE
V
CC
= 0.25BV
CES
V
CC
= BV
CES
8
6
2
NOTE:
FOR TURN-OFF GATE CURRENTS IN
EXCESS OF 3mA. V
TURN-OFF IS
NOT ACCURATELY REPRESENTED
BY THIS NORMALIZATION.
100
10
1
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
EC
, EMITTER-COLLECTOR (V)
I
E
,
TYPICAL DIODE ON VOLTAGE
T
J
= +150
o
C
T
J
= +100
o
C
T
J
= +25
o
C
T
J
= -50
o
C
t
R
,
I
EC
, EMITTER-COLLECTOR CURRENT (A)
60
50
40
30
20
10
0
2
4
6
8
10
12
14
16
18
20
TYPICAL REVERSE RECOVERY TIME
dI
EC
/d
T
≥
100A/
μ
s
V
R
= 30V, T
J
= +25
o
C
20V
0V
R
GEN
= 100
1/R
G
= 1/R
GEN
+ 1/R
GE
R
GE
= 100
L = 50
μ
H
V
300V
R
L
= 13
V
CC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP10N40C1D | CAP 0.082UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22 |
| HGTP10N40F1D | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk |
| HGTP10N50F1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| HGTP11N120CN | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk |
| HGT1S11N120CNS9A | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 22A I(C) | TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTP10N50F1D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| HGTP10W40C1 | 制造商:Harris Corporation 功能描述: |
| HGTP11N120CN | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:43A, 1200V, NPT Series N-Channel IGBT |
| HGTP12N6001 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| HGTP12N60A4 | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。