參數(shù)資料
型號(hào)： HGTP10N50E1D
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 330uF; Voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk
中文描述： 17.5 A, 500 V, N-CHANNEL IGBT, TO-220AB
文件頁數(shù)： 2/6頁
文件大?。?/td> 37K
代理商： HGTP10N50E1D
3-21
Specifications HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
HGTP10N40C1D,
HGTP10N40E1D
HGTP10N50C1D,
HGTP10N50E1D
MIN
MAX
MIN
MAX
Collector-Emitter Breakdown Voltage
BV
CES
I
C
= 1mA, V
GE
= 0
400
-
500
-
V
Gate Threshold Voltage
V
GE(TH)
V
GE
= V
CE
, I
C
= 1mA
2.0
4.5
2.0
4.5
V
Zero Gate Voltage Collector Current
I
CES
V
CE
= 400V, T
C
= +25
o
C
-
250
-
-
μ
A
V
CE
= 500V, T
C
= +25
o
C
-
-
-
250
μ
A
V
CE
= 400V, T
C
= +125
o
C
-
1000
-
-
μ
A
V
CE
= 500V, T
C
= +125
o
C
-
-
-
1000
μ
A
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V, V
CE
= 0
-
100
-
100
nA
Collector-Emitter On Voltage
V
CE(ON)
I
C
= 10A, V
GE
= 10V
-
2.5
-
2.5
V
I
C
= 17.5A, V
GE
= 20V
-
3.2
-
3.2
V
Gate-Emitter Plateau Voltage
V
GEP
I
C
= 5A, V
CE
= 10V
-
6 (Typ)
-
6 (Typ)
V
On-State Gate Charge
Q
G(ON)
I
C
= 5A, V
CE
= 10V
-
19 (Typ)
-
19 (Typ)
nC
Turn-On Delay Time
t
D(ON)I
I
C
= 10A, V
CE(CLP)
= 300V,
L = 50
μ
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 50
-
50
-
50
ns
Rise Time
t
RI
-
50
-
50
ns
Turn-Off Delay Time
t
D(OFF)I
-
400
-
400
ns
Fall Time
t
FI
40E1D, 50E1D
680 (Typ)
1000
680 (Typ)
1000
ns
40C1D, 50C1D
400 (Typ)
500
400 (Typ)
500
ns
Turn-Off Energy Loss per Cycle (Off
Switching Dissipation =
W
OFF
x Frequency)
W
OFF
I
C
= 10A, V
CE(CLP)
= 300V,
L = 50
μ
H, T
J
= +100
o
C,
V
GE
= 10V, R
G
= 50
40E1D, 50E1D
1810 (Typ)
μ
J
40C1D, 50C1D
1070 (Typ)
μ
J
Thermal Resistance Junction-to-Case
R
θ
JC
-
1.67
-
1.67
o
C/W
Diode Forward Voltage
V
EC
I
EC
= 10A
-
2
-
2
V
Diode Reverse Recovery Time
t
RR
I
EC
= 10A, di/dt = 100A/
μ
s
-
100
-
100
ns
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
相關(guān)PDF資料
PDF描述
HGTP10N40C1D CAP 0.082UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
HGTP10N40F1D Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP11N120CN Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk
HGT1S11N120CNS9A TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 22A I(C) | TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTP10N50F1D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP10W40C1 制造商:Harris Corporation 功能描述:
HGTP11N120CN 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:43A, 1200V, NPT Series N-Channel IGBT
HGTP12N6001 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTP12N60A4 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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