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參數(shù)資料
| 型號(hào)： | HGTP10N50F1D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes |
| 中文描述： | 12 A, 500 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 34K |
| 代理商： | HGTP10N50F1D |
3-25
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
HGTP10N40F1D,
HGTP10N50F1D
10A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
10A, 400V and 500V
Latch Free Operation
Typical Fall Time < 1.4
μ
s
High Input Impedance
Low Conduction Loss
Anti-Parallel Diode
t
RR
< 60ns
Description
The IGBT is a MOS gated high voltage switching device combin-
ing the best features of MOSFETs and bipolar transistors. The
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between +25
o
C
and +150
o
C. The diode used in parallel with the IGBT is an
ultrafast (t
RR
< 60ns) with soft recovery characteristic.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER
HGTP10N40F1D
HGTP10N50F1D
NOTE: When ordering, use the entire part number
PACKAGE
TO-220AB
TO-220AB
BRAND
10N40F1D
10N50F1D
Package
JEDEC TO-220AB
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
COLLECTOR
(FLANGE)
GATE
COLLECTOR
EMITTER
C
G
E
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified
HGTP10N40F1D
400
400
12
10
12
±
20
16
10
75
0.6
-55 to +150
260
HGTP10N50F1D
500
500
12
10
12
±
20
16
10
75
0.6
-55 to +150
260
UNITS
V
V
A
A
A
V
A
A
W
W/
o
C
o
C
o
C
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector-Gate Voltage R
GE
= 1M
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CGR
Collector Current Continuous at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . I
C90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Diode Forward Current at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F25
at T
C
= +90
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F90
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
NOTE:
1. T
J
= +150
o
C, Min. R
GE
= 25
without latch.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
2751.2
April 1995
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