參數(shù)資料
型號： HGTP10N50E1D
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 330uF; Voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk
中文描述： 17.5 A, 500 V, N-CHANNEL IGBT, TO-220AB
文件頁數(shù)： 4/6頁
文件大?。?/td> 37K
代理商： HGTP10N50E1D
3-23
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
FIGURE 8. TYPICAL V
CE(ON)
vs TEMPERATURE
FIGURE 9. TYPICAL TURN-OFF DELAY TIME
FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 11. TYPICAL FALL TIME (I
C
= 5A)
FIGURE 12. TYPICAL FALL TIME (I
C
= 10A)
Typical Performance Curves
(Continued)
1000
800
600
400
200
0
C
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
f = 0.1MHz
CISS
COSS
CRSS
1200
3.00
2.75
2.50
2.25
2.00
1.75
1.50
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
V
C
,
I
C
= 5A, V
GE
= 15V
I
C
= 5A, V
GE
= 10V
I
C
= 10A, V
GE
= 15V
I
C
= 10A, V
GE
= 10V
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
T
D
,
I
C
= 20A, V
GE
= 10V, V
CL
= 300V
L =25
μ
H, R
G
= 25
V
GE
V
CE
I
C
W
OFF
=
∫
I
C
*
V
CE
dt
800
700
600
500
400
300
200
100
0
+25
+50
T
J
, JUNCTION TEMPERATURE (
o
C)
+75
+100
+125
+150
t
F
,
I
C
= 5A, V
GE
= 10V, V
CL
= 300V
L = 50
μ
H, R
G
= 50
40C1/50C1
40E1/50E1
800
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
T
J
, JUNCTION TEMPERATURE (
o
C)
t
F
,
I
C
= 10A, V
GE
= 10V, V
CL
= 300V
L = 50
μ
H, R
G
= 50
40C1/50C1
40E1/50E1
相關(guān)PDF資料
PDF描述
HGTP10N40C1D CAP 0.082UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
HGTP10N40F1D Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP11N120CN Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk
HGT1S11N120CNS9A TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 22A I(C) | TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTP10N50F1D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
HGTP10W40C1 制造商:Harris Corporation 功能描述:
HGTP11N120CN 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:43A, 1200V, NPT Series N-Channel IGBT
HGTP12N6001 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGTP12N60A4 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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