型號: | HGT1S11N120CNS9A |
廠商: | FAIRCHILD SEMICONDUCTOR CORP |
元件分類: | 功率晶體管 |
英文描述: | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 22A I(C) | TO-263AB |
中文描述: | 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB |
封裝: | TO-263AB, 3 PIN |
文件頁數(shù): | 1/7頁 |
文件大?。?/td> | 138K |
代理商: | HGT1S11N120CNS9A |
相關(guān)PDF資料 |
PDF描述 |
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HGT1S11N120CNS | 43A, 1200V, NPT Series N-Channel IGBT |
HGTP12N60C3D | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
HGTP12N60C3D | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
HGT1S12N60C3DS | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
HGTP14N36G3VL | DIODE ZENER SINGLE 500mW 30Vz 4.2mA-Izt 0.05 0.1uA-Ir 23Vr DO35-GLASS 5K/REEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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HGT1S12N60A4DS | 功能描述:IGBT 晶體管 12A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
HGT1S12N60A4DS9A | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB |
HGT1S12N60A4S | 制造商:Fairchild Semiconductor Corporation 功能描述: |
HGT1S12N60A4S9A | 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
HGT1S12N60B3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |