- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385377 > HGTG30N60B3D (INTERSIL CORP) 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 帶超快二極管N溝道絕緣柵雙極型晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | HGTG30N60B3D |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 帶超快二極管N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 118K |
| 代理商： | HGTG30N60B3D |
4
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
f
M
,
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
0.1
10
60
20
40
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON
+ E
OFF
)
R
θ
JC
= 0.6
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
75
o
C
75
o
C
V
GE
15V
10V
110
o
C
10V
15V
110
o
C
10
T
J
= 150
o
C, R
G
= 3
, L = 1mH,
V
CE
= 480V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
13
14
15
6
8
10
12
16
20
14
150
200
250
300
350
400
500
t
SC
I
SC
18
450
V
CE
= 360V, R
G
= 3
, T
J
= 125
o
C
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
25
50
75
6
8
10
150
125
100
175
T
C
= -55
o
C
T
C
= 150
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
225
200
T
C
= 25
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
200
250
300
350
0
1
2
0
150
3
4
5
100
50
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
6
7
E
O
,
5
3
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
4
2
1
40
20
60
50
30
10
6
0
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
R
G
= 3
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0
0.5
50
30
20
40
60
10
1.0
2.5
R
G
= 3
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V OR 15V
T
J
= 25
o
C, V
GE
= 10V OR 15V
2.0
1.5
3.0
3.5
4.0
4.5
HGTG30N60B3D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTG30N60B3 | 60A, 600V, UFS Series N-Channel IGBT(60A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| HGTG30N60C3D | 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes |
| HGTG32N60E2 | 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN |
| HGTG34N100E2 | LED 5MM VERT SUP DIFF YEL PC MNT |
| HGTG40N60A4 | 600V, SMPS Series N-Channel IGBTs(600V, SMPS系列N溝道絕緣柵雙極型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V30ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,30A,TO-247 |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:SEMICONDUCTOR |
| HGTG30N60B3D_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG30N60B3D_Q | 功能描述:IGBT 晶體管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG30N60C3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。