參數(shù)資料
型號: HGTG30N60B3
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: 60A, 600V, UFS Series N-Channel IGBT(60A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管)
中文描述: 60 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁數(shù): 4/8頁
文件大?。?/td> 114K
代理商: HGTG30N60B3
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
2
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
25
50
75
6
8
10
150
125
100
T
C
= 25
o
C
175
T
C
= -55
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE <0.5%, V
GE
= 10V
225
200
T
C
= 150
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
200
250
300
350
0
1
2
0
150
3
4
5
100
50
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
C
= -55
o
C
T
C
= 150
o
C
T
C
= 25
o
C
6
7
E
O
,
5
3
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
4
2
1
40
20
60
50
30
10
6
0
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
R
G
= 3
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
0
0.5
50
30
20
40
60
10
1.0
2.5
R
G
= 3
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V OR 15V
T
J
= 25
o
C, V
GE
= 10V OR 15V
2.0
1.5
3.0
3.5
4.0
4.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
20
10
30
50
25
30
35
40
45
50
40
55
60
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
R
G
= 3
, L = 1mH, V
CE
= 480V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
20
0
50
250
200
100
60
10
150
50
40
30
R
G
= 3
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
HGTG30N60B3
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相關代理商/技術參數(shù)
參數(shù)描述
HGTG30N60B3_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
HGTG30N60B3D 功能描述:IGBT 晶體管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG30N60B3D 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V30ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,30A,TO-247
HGTG30N60B3D 制造商:Fairchild Semiconductor Corporation 功能描述:SEMICONDUCTOR
HGTG30N60B3D_04 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode