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參數(shù)資料
| 型號(hào)： | HGTG30N60B3 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 60A, 600V, UFS Series N-Channel IGBT(60A, 600V, UFS系列 N溝道絕緣柵雙極型晶體管) |
| 中文描述： | 60 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 114K |
| 代理商： | HGTG30N60B3 |
3
Current Turn-On Delay Time
t
d(ON)I
IGBT and Diode at T
J
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 3
L = 1mH
Test Circuit (Figure 17)
-
32
-
ns
Current Rise Time
t
rI
-
24
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
-
275
320
ns
Current Fall Time
t
fI
-
90
150
ns
Turn-On Energy (Note 4)
E
ON1
-
500
-
μ
J
Turn-On Energy (Note 4)
E
ON2
-
1300
1550
μ
J
Turn-Off Energy (Note 3)
E
OFF
-
1600
1900
μ
J
Thermal Resistance Junction To Case
R
θ
JC
-
-
0.6
o
C/W
NOTES:
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 17.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
10
0
40
20
30
50
60
V
GE
= 15V
25
75
100
125
150
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
125
700
75
0
I
C
,
25
50
300
400
200
100
500
600
100
0
150
175
200
225
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L =100
μ
H
f
M
,
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
0.1
10
60
20
40
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.6
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
C
75
o
C
75
o
C
V
GE
15V
10V
110
o
C
10V
15V
110
o
C
10
V
CE
= 480V
T
J
= 150
o
C, R
G
= 3
, L = 1mH,
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
13
14
15
6
8
10
12
16
20
14
150
200
250
300
350
400
500
t
SC
I
SC
18
450
V
CE
= 360V, R
G
= 3
, T
J
= 125
o
C
HGTG30N60B3
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相關(guān)代理商/技術(shù)參數(shù) |
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| HGTG30N60B3_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HGTG30N60B3D | 功能描述:IGBT 晶體管 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBTN CH600V30ATO-247 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT,N CH,600V,30A,TO-247 |
| HGTG30N60B3D | 制造商:Fairchild Semiconductor Corporation 功能描述:SEMICONDUCTOR |
| HGTG30N60B3D_04 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
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