參數(shù)資料
型號(hào)： HGTG20N120E2
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 34A, 1200V N-Channel IGBT
中文描述： 34 A, 1200 V, N-CHANNEL IGBT, TO-247
文件頁數(shù)： 2/5頁
文件大?。?/td> 167K
代理商： HGTG20N120E2
3-99
Specifications HGTG20N120E2
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
PARAMETERS
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN
TYP
MAX
Collector-Emitter Breakdown
Voltage
BV
CES
I
C
= 250
μ
A, V
GE
= 0V
1200
-
-
V
Collector-Emitter Leakage Current
I
CES
V
CE
= BV
CES
T
C
= +25
o
C
-
-
250
μ
A
V
CE
= 0.8 BV
CES
T
C
= +125
o
C
-
-
1.0
mA
Collector-Emitter Saturation
Voltage
V
CE(SAT)
I
C
= I
C90
, V
GE
= 15V
T
C
= +25
o
C
-
2.9
3.5
V
T
C
= +125
o
C
-
3.0
3.6
V
I
C
= I
C90
, V
GE
= 10V
T
C
= +25
o
C
-
3.1
3.8
V
T
C
= +125
o
C
-
3.3
4.0
V
Gate-Emitter Threshold Voltage
V
GE(TH)
I
C
= 500
μ
A,
V
CE
= V
GE
T
C
= +25
o
C
3.0
4.5
6.0
V
Gate-Emitter Leakage Current
I
GES
V
GE
=
±
20V
-
-
±
250
nA
Gate-Emitter Plateau Voltage
V
GEP
I
C
= I
C90
, V
CE
= 0.5 BV
CES
-
7.0
-
V
On-State Gate Charge
Q
G(ON)
I
C
= I
C90
,
V
CE
= 0.5 BV
CES
V
GE
= 15V
-
110
150
nC
V
GE
= 20V
-
150
200
nC
Current Turn-On Delay Time
t
D(ON)
R
L
= 48
I
C
= I
C90
, V
GE
= 15V,
V
CE
= 0.8 BV
CES
,
R
G
= 25
,
T
J
= +125
o
C
-
100
-
ns
Current Rise Time
t
R
-
150
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
L = 50
μ
H
-
520
620
ns
Current Fall Time
t
FI
-
780
1000
ns
Turn-Off Energy (Note 1)
W
OFF
-
7.0
-
mJ
Current Turn-On Delay Time
t
D(ON)
R
L
= 48
I
C
= I
C90
, V
GE
= 10V,
V
CE
= 0.8 BV
CES
,
R
G
= 25
,
T
J
= +125
o
C
-
100
-
ns
Current Rise Time
t
R
-
150
-
ns
Current Turn-Off Delay Time
t
D(OFF)I
L = 50
μ
H
-
420
520
ns
Current Fall Time
t
FI
-
780
1000
ns
Turn-Off Energy (Note 1)
W
OFF
-
7.0
-
mJ
Thermal Resistance
R
θ
JC
-
0.70
0.83
o
C/W
NOTE:
1. Turn-Off Energy Loss (W
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). The HGTG20N120E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
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