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參數(shù)資料
| 型號： | HGTG12N60A4D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 36 MACROCELL 3.3 VOLT ISP CPLD |
| 中文描述： | 54 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 173K |
| 代理商： | HGTG12N60A4D |
2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
0.5
1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
4
8
1.5
2
2.5
16
20
12
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 12V
24
T
J
= 25
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
0
0.5
1.0
1.5
2
2.5
4
8
16
12
20
24
0
E
O
,
μ
J
500
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
400
200
600
0
700
6
4
10
12
14
16
8
18
20
22
24
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
100
2
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
0
50
200
100
250
350
400
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
150
6
4
2
10
12
14
16
8
18
20
22
24
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
10
11
12
13
14
15
6
4
2
10
12
14
16
8
18
20
22
24
16
17
18
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
4
16
12
8
6
4
2
10
12
14
16
8
18
20
22
24
20
32
28
24
R
G
= 10
, L = 500
μ
H, V
CE
= 390V
T
J
= 125
o
C OR T
J
= 25
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HGTP12N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1S12N60A4DS9A | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB |
| HGTP12N60A4D | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk |
| HGT1S12N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGTG12N60A4 | 600V, SMPS Series N-Channel IGBTs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HGTG12N60A4D | 制造商:Intersil Corporation 功能描述:IGBT TO-247 |
| HGTG12N60A4S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-247AA |
| HGTG12N60B3 | 功能描述:IGBT 晶體管 12A 600V UFS N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGTG12N60B3D | 制造商:Harris Corporation 功能描述: |
| HGTG12N60C3D | 功能描述:IGBT 晶體管 24a 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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