參數(shù)資料
型號： HGTG12N60A4D
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 36 MACROCELL 3.3 VOLT ISP CPLD
中文描述： 54 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁數(shù)： 2/8頁
文件大?。?/td> 173K
代理商： HGTG12N60A4D
2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS
600
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
54
23
96
±
20
±
30
A
A
A
V
V
60A at 600V
167
1.33
-55 to 150
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
CES
I
C
= 250
μ
A, V
GE
= 0V
V
CE
= 600V
600
-
-
V
Collector to Emitter Leakage Current
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
-
-
250
μ
A
-
-
2.0
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 12A,
V
GE
= 15V
-
2.0
2.7
V
-
1.6
2.0
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
GES
SSOA
I
C
= 250
μ
A, V
CE
= 600V
V
GE
=
±
20V
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V,
L = 100
μ
H, V
CE
= 600V
I
C
= 12A, V
CE
= 300V
I
C
= 12A,
V
CE
= 300V
-
5.6
-
V
Gate to Emitter Leakage Current
-
-
±
250
nA
Switching SOA
60
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
Q
g(ON)
-
8
-
V
On-State Gate Charge
V
GE
= 15V
V
GE
= 20V
-
78
96
nC
-
97
120
nC
Current Turn-On Delay Time
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 12A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 10
,
L = 500
μ
H,
Test Circuit (Figure 24)
-
17
-
ns
Current Rise Time
-
8
-
ns
Current Turn-Off Delay Time
-
96
-
ns
Current Fall Time
-
18
-
ns
Turn-On Energy (Note 3)
-
55
-
μ
J
μ
J
μ
J
Turn-On Energy (Note 3)
-
160
-
Turn-Off Energy (Note 2)
-
50
-
Current Turn-On Delay Time
IGBT and Diode at T
J
= 125
o
C,
I
CE
= 12A,
V
CE
= 390V, V
GE
= 15V,
R
G
= 10
,
L = 500
μ
H,
Test Circuit (Figure 24)
-
17
-
ns
Current Rise Time
-
16
-
ns
Current Turn-Off Delay Time
-
110
170
ns
Current Fall Time
-
70
95
ns
Turn-On Energy (Note3)
-
55
-
μ
J
μ
J
μ
J
Turn-On Energy (Note 3)
-
250
350
Turn-Off Energy (Note 2)
-
175
285
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
相關(guān)PDF資料
PDF描述
HGTP12N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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HGTP12N60A4D Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG12N60A4D 制造商:Intersil Corporation 功能描述:IGBT TO-247
HGTG12N60A4S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-247AA
HGTG12N60B3 功能描述:IGBT 晶體管 12A 600V UFS N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG12N60B3D 制造商:Harris Corporation 功能描述:
HGTG12N60C3D 功能描述:IGBT 晶體管 24a 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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