參數(shù)資料
型號(hào): HGTG12N60A4D
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: 36 MACROCELL 3.3 VOLT ISP CPLD
中文描述: 54 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 173K
代理商: HGTG12N60A4D
2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
Diode Forward Voltage
V
EC
t
rr
I
EC
= 12A
I
EC
= 12A, dI
EC
/dt = 200A/
μ
s
I
EC
= 1A, dI
EC
/dt = 200A/
μ
s
IGBT
-
2.2
-
V
Diode Reverse Recovery Time
-
30
-
ns
-
18
-
ns
Thermal Resistance Junction To Case
R
θ
JC
-
-
0.75
o
C/W
o
C/W
Diode
-
-
2.0
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 24.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
10
0
40
20
30
25
75
100
125
150
60
50
V
GE
= 15V,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
40
0
I
C
,
10
20
300
400
200
100
500
600
0
50
60
30
70
T
J
= 150
o
C, R
G
= 10
, V
GE
= 15V, L = 200
μ
H
T
C
75
o
C
V
GE
15V
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
3
300
30
10
20
500
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.75
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
T
J
= 125
o
C, R
G
= 10
, L = 500
μ
H, V
CE
= 390V
100
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
9
10
11
12
15
0
2
10
16
50
125
175
300
t
SC
I
SC
20
250
13
14
4
6
8
12
14
18
75
100
150
200
225
275
V
CE
= 390V, R
G
= 10
, T
J
= 125
o
C
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
相關(guān)PDF資料
PDF描述
HGTP12N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S12N60A4DS9A TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB
HGTP12N60A4D Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
HGT1S12N60A4DS 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG12N60A4 600V, SMPS Series N-Channel IGBTs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGTG12N60A4D 制造商:Intersil Corporation 功能描述:IGBT TO-247
HGTG12N60A4S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-247AA
HGTG12N60B3 功能描述:IGBT 晶體管 12A 600V UFS N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGTG12N60B3D 制造商:Harris Corporation 功能描述:
HGTG12N60C3D 功能描述:IGBT 晶體管 24a 600V IGBT UFS N-Channel RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube