參數(shù)資料
型號： HGT1S12N60A4DS9A
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 54A I(C) | TO-263AB
中文描述： 54 A, 600 V, N-CHANNEL IGBT, TO-263AB
文件頁數(shù)： 1/8頁
文件大?。?/td> 173K
代理商： HGT1S12N60A4DS9A
2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
HGTG12N60A4D, HGTP12N60A4D,
HGT1S12N60A4DS
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C. The
IGBT used is the development type TA49335. The diode
used in anti-parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49337.
Symbol
Features
>100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A
200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T
J
= 125
o
C
Low Conduction Loss
Temperature Compensating
SABER Model
www.fairchildsermi.com
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
JEDEC TO-263AB
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG12N60A4D
TO-247
12N60A4D
HGTP12N60A4D
TO-220AB
12N60A4D
HGT1S12N60A4DS
TO-263AB
12N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4DS9A.
C
E
G
GC
E
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
COLLECTOR
(FLANGE)
C
E
G
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
Data Sheet
December 2001
相關(guān)PDF資料
PDF描述
HGTP12N60A4D Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
HGT1S12N60A4DS 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTG12N60A4 600V, SMPS Series N-Channel IGBTs
HGTG12N60D1 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HGT1S12N60A4S 制造商:Fairchild Semiconductor Corporation 功能描述:
HGT1S12N60A4S9A 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
HGT1S12N60B3 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGT1S12N60B3D 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
HGT1S12N60B3DS 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
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