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參數(shù)資料
| 型號(hào)： | HGT1N30N60A4D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 96 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 144K |
| 代理商： | HGT1N30N60A4D |
2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
5
10
15
20
25
0
2
6
8
10
4
FREQUENCY = 1MHz
C
OES
C
IES
V
GE
, GATE TO EMITTER VOLTAGE (V)
9
1.7
12
1.8
2.0
1.9
11
13
14
15
16
2.1
2.3
V
C
,
I
CE
= 60A
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250
μ
s, T
J
= 25
o
C
I
CE
= 30A
I
CE
= 15A
2.2
10
0.5
1.0
1.5
2.5
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
0
10
15
20
25
25
o
C
125
o
C
5
35
30
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%,
60
40
20
0
t
r
,
I
EC
, FORWARD CURRENT (A)
0
30
20
70
50
30
10
10
15
25
80
100
25
o
C t
rr
25
o
C t
a
25
o
C t
b
125
o
C t
b
125
o
C t
a
dI
EC
/dt = 200A/
μ
s
125
o
C t
rr
5
90
300
400
500
700
800
t
r
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
200
600
10
0
20
30
40
50
60
900
1000
125
o
C t
a
125
o
C t
b
25
o
C t
a
25
o
C t
b
I
EC
= 30A, V
CE
= 390V
800
400
0
200
Q
r
,
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
1000
1200
1000
600
200
400
1400
600
800
V
CE
= 390V
125
o
C, I
F
= 20A
125
o
C, I
F
= 40A
25
o
C, I
F
= 40A
25
o
C, I
F
= 20A
HGT1N30N60A4D
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HGT1N40N60A4 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1N40N60A4D | 功能描述:IGBT 晶體管 45A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S020N35G3VL | 制造商:Harris Corporation 功能描述: |
| HGT1S10N120BNS | 功能描述:IGBT 晶體管 35A 1200V NPT N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S10N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 17A I(C) | TO-263AB |
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