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參數(shù)資料
| 型號(hào)： | HGT1N30N60A4D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 96 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 144K |
| 代理商： | HGT1N30N60A4D |
2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B
Diode Reverse Recovery Time
t
rr
I
EC
I
EC
IGBT
= 30A, dI
EC
/dt = 200A/
μ
s
-
40
55
ns
= 1A, dI
EC
/dt = 200A/
μ
s
-
30
42
ns
Thermal Resistance Junction To Case
R
θ
JC
-
-
0.49
o
C/W
o
C/W
Diode
-
-
2.0
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 24.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
ON1
J
is the turn-on loss of the IGBT only. E
as the IGBT. The diode type is specified in
ON2
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
20
0
50
30
40
25
75
100
125
150
100
70
90
60
V
GE
= 15V
10
80
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
I
C
,
300
400
200
100
500
600
0
100
150
50
200
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 100
μ
H
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
300
60
10
30
500
100
T
C
75
o
C
V
GE
15V
T
J
= 125
o
C, R
G
= 3
, L = 200
μ
H, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.49
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
10
11
12
15
10
16
300
500
900
t
SC
I
SC
800
13
14
4
6
8
12
14
18
200
400
600
700
V
CE
= 390V, R
G
= 3
, T
J
= 125
o
C
HGT1N30N60A4D
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| HGT1N40N60A4 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1N40N60A4D | 功能描述:IGBT 晶體管 45A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S020N35G3VL | 制造商:Harris Corporation 功能描述: |
| HGT1S10N120BNS | 功能描述:IGBT 晶體管 35A 1200V NPT N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S10N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 17A I(C) | TO-263AB |
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