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參數(shù)資料
| 型號(hào)： | HGT1N30N60A4D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| 中文描述： | 96 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 144K |
| 代理商： | HGT1N30N60A4D |
2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
160
120
140
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
220
200
180
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
20
10
30
40
50
60
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
20
30
40
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V OR 15V
50
70
20
10
30
40
50
60
0
T
J
= 125
o
C, V
GE
= 12V OR 15V
60
I
C
,
0
50
100
7
8
9
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
300
350
6
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
T
J
= -55
o
C
250
200
T
J
= 25
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2.5
12.5
0
7.5
I
G(REF)
= 1mA, R
L
= 15
, T
J
= 25
o
C
V
CE
= 200V
5.0
10.0
15.0
V
CE
= 600V
50
100
150
200
250
0
V
CE
= 400V
I
CE
= 15A
0
2
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
3
125
25
150
5
E
T
,
R
G
= 3
, L = 200
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
4
I
CE
= 60A
I
CE
= 30A
1
0
10
100
R
G
, GATE RESISTANCE (
)
16
3
300
E
T
,
20
T
J
= 125
o
C, L = 200
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 15A
I
CE
= 30A
I
CE
= 60A
12
8
4
HGT1N30N60A4D
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| HGT1N40N60A4 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
| HGT1N40N60A4D | 功能描述:IGBT 晶體管 45A 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S020N35G3VL | 制造商:Harris Corporation 功能描述: |
| HGT1S10N120BNS | 功能描述:IGBT 晶體管 35A 1200V NPT N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| HGT1S10N120BNS9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 17A I(C) | TO-263AB |
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