參數(shù)資料
型號： HGT1N30N60A4D
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
中文描述： 96 A, 600 V, N-CHANNEL IGBT
封裝： ISOTOP-4
文件頁數(shù)： 2/9頁
文件大小： 144K
代理商： HGT1N30N60A4D
2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
At T
C
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At T
C
= 110
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
J
= 150
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating T
C
> 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS Isolation Voltage, Any Terminal To Case, t = 1 (Min). . . . . . . . . . . . . . . . . . . . . . . .V
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Terminal Screw Torque 4mm Metric Screw Size
CES
600
o
C25
96
39
240
±
20
±
30
A
A
A
V
V
o
C110
CM
GES
GEM
o
150A at 600V
255
2.0
2500
-55 to 150
1.5
1.7
o
D
W
o
W/
o
C
ISOL
, T
STG
V
o
J
C
N-m
N-m
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BV
CES
I
C
V
= 250
μ
A, V
GE
= 0V
600
-
-
V
Collector to Emitter Leakage Current
I
CES
CE
= 600V
T
J
= 25
o
C
o
-
-
250
μ
A
T
J
= 125
C
-
-
2.8
mA
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
V
C
= 30A,
GE
= 15V
T
J
= 25
o
C
o
-
1.8
2.7
V
T
J
= 125
C
-
1.6
2.0
V
Gate to Emitter Threshold Voltage
V
GE(TH)
I
GES
SSOA
I
C
V
= 250
μ
A, V
CE
= 600V
4.5
5.2
7.0
V
Gate to Emitter Leakage Current
GE
= 150
L = 100
=
±
20V
o
C, R
μ
H, V
-
-
±
250
nA
Switching SOA
T
J
G
= 3
= 600V
, V
GE
= 15V,
CE
= 300V
150
-
-
A
Gate to Emitter Plateau Voltage
V
GEP
I
C
I
C
V
= 30A, V
CE
-
8.5
-
V
On-State Gate Charge
Q
g(ON)
= 30A,
CE
= 300V
V
GE
= 15V
-
225
270
nC
V
GE
= 20V
o
C,
-
300
360
nC
Current Turn-On Delay Time
t
d(ON)I
t
rI
IGBT and Diode at T
I
CE
= 30A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3
,
L = 200
μ
H,
Test Circuit (Figure 24)
J
= 25
-
25
-
ns
Current Rise Time
-
12
-
ns
Current Turn-Off Delay Time
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
V
EC
-
150
-
ns
Current Fall Time
-
38
-
ns
Turn-On Energy (Note 2)
-
280
-
μ
μ
μ
J
Turn-On Energy (Note 2)
-
600
-
J
Turn-Off Energy (Note 3)
-
240
350
J
Current Turn-On Delay Time
IGBT and Diode at T
I
CE
= 30A,
V
CE
= 390V, V
R
G
= 3
,
L = 200
μ
H,
Test Circuit (Figure 24)
J
= 125
o
C,
GE
= 15V,
-
24
-
ns
Current Rise Time
-
11
-
ns
Current Turn-Off Delay Time
-
180
200
ns
Current Fall Time
-
58
70
ns
Turn-On Energy (Note 2)
-
280
-
μ
μ
μ
J
Turn-On Energy (Note 2)
-
1000
1200
J
Turn-Off Energy (Note 3)
-
450
750
J
Diode Forward Voltage
I
EC
= 30A
-
2.2
2.5
V
HGT1N30N60A4D
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HGT1N40N60A4 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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